2N1008A - Motorola

2N1008A PNP germanium transistor

2N1008, A, B(GERMANIUM) 2Nl008B JAN AVAILABLE CASE31(~,1)_~ (TO-5) All ,leads isolated PNP germanium transistor for audio driver and medium speed switching applications. MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation TA = 25°C derate TC = 25°C derate Juncti.

Features

dc 10 500 10 500 15 750 J1-Adc 10 10 10 Collector-Emitter Breakdown Voltage (Ie = 1.0 mAdc, RBE = 10 K) 2N100S 2N100SA 2N100SB BVCER 15 35 55 --------- Vdc --------- Collector-Emitter Saturation Voltage (Ie = 100 mAdc, IB = 10 mAdc) VCE (sat) Small Signal Current Gain (Ie '" -10 mAdc, VCE = 5.0 Vdc, hte f= 1 kHz) Input Resistance (VCB = 6 V, IE = 1 mA) ~e --- --- 40 --- 200 --- Vdc 0.25 --- 150 1000 ohms 2-148 .