EiceDRIVER™ 2EDBx259K is a family of dual-channel isolated gate driver ICs designed to drive Si MOSFETs. 2EDBx259K is available in a 13-pin LGA package with 3.4 mm input-to-output creepage and provide basic isolation by means of on-chip coreless transformer (CT) technology. 2EDBx259K offers optional shoot-through protection (STP) and dead-time control (DTC) .
• 2-channel isolated gate driver for Si MOSFETs
• Fast input-to-output propagation (38 ns) with
excellent stability (+9/-5 ns)
• Strong output stage: 5 A/9 A source/ sink
• Fast output clamping for VDDA/B < UVLO
• Fast UVLO recovery time (< 2 μs)
• Two VDDA/B UVLO options: 4 V, 8 V
• CMTI > 150 V/ns
• Available in 13-pin LGA 5×5
Isolation and safety certificates
• UL1577 with VISO = 2500 VRMS (certification n.
E311313)
Table 1
Portfolio
Part
UVLO
VISO
number
Package
2EDB7259K 4 V 2EDB8259K 8 V
2.5 kVrms 2.5 kVrms
LGA 5×5 LGA 5×5
Potential applications
• Server, telecom SMPS
• EV off.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2EDB8259K |
Infineon |
Dual-channel isolated gate-driver | |
2 | 2ED020I06-FI |
Infineon |
Dual IGBT Driver | |
3 | 2ED020I12-F |
eupec GmbH |
Dual IGBT Driver | |
4 | 2ED020I12-F2 |
Infineon |
Dual IGBT Driver | |
5 | 2ED020I12-FI |
Infineon |
Dual IGBT Driver | |
6 | 2ED020I12FA |
Infineon |
Dual IGBT Driver | |
7 | 2ED21084S06J |
Infineon |
650V half bridge gate driver | |
8 | 2ED2108S06F |
Infineon |
650V half bridge gate driver | |
9 | 2ED21094S06J |
Infineon |
650V half bridge gate driver | |
10 | 2ED2109S06F |
Infineon |
650V half bridge gate driver | |
11 | 2ED21814S06J |
Infineon |
650V high-side and low-side gate driver | |
12 | 2ED2181S06F |
Infineon |
650V high-side and low-side gate driver |