2ED2108S06F - Infineon

2ED2108S06F 650V half bridge gate driver

The 2ED2108 (4) S06F (J) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 V on VS pin (VCC = 15 V) on transient voltage.

Features

• Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology
• Negative VS transient immunity of 100 V
• Floating channel designed for bootstrap operation
• Operating voltages (VS node) upto + 650 V
• Maximum bootstrap voltage (VB node) of + 675 V
• Integrated ultra-fast, low resistance bootstrap diode
• Logic operational up to
  –11 V on VS Pin
• Negative voltage tolerance on inputs of
  –5 V
• Independent under voltage lockout for both channels
• Schmitt trigger inputs with hysteresis
• 3.3 V, 5 V and 15 V input logic compatible
• Maximum supply voltage of 25 V
• Dual package options of DSO.