The 2ED28073J06F is a high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high-pulse .
Product summary
Negative VS transient immunity of 70 V, dV/dt immune
Lower di/dt gate driver for better noise immunity
Floating channel designed for bootstrap operation
Operating voltages (VS node) upto + 600 V
Maximum bootstrap voltage (VB node) of + 625 V
Integrated bootstrap diode
Integrated shoot-through protection with built-in dead time
Integrated short pulse / noise rejection filter on input
Independent under voltage lockout for both high and low side
Schmitt trigger inputs with hysteresis
3.3 V, 5 V and 15 V input logic compatible
Maximum supply voltage of 25 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2ED21084S06J |
Infineon |
650V half bridge gate driver | |
2 | 2ED2108S06F |
Infineon |
650V half bridge gate driver | |
3 | 2ED21094S06J |
Infineon |
650V half bridge gate driver | |
4 | 2ED2109S06F |
Infineon |
650V half bridge gate driver | |
5 | 2ED21814S06J |
Infineon |
650V high-side and low-side gate driver | |
6 | 2ED2181S06F |
Infineon |
650V high-side and low-side gate driver | |
7 | 2ED21834S06J |
Infineon |
650V half-bridge gate driver | |
8 | 2ED2183S06F |
Infineon |
650V half-bridge gate driver | |
9 | 2ED2304S06F |
Infineon |
650V Half Bridge Gate Driver | |
10 | 2ED020I06-FI |
Infineon |
Dual IGBT Driver | |
11 | 2ED020I12-F |
eupec GmbH |
Dual IGBT Driver | |
12 | 2ED020I12-F2 |
Infineon |
Dual IGBT Driver |