at any time, without notice. Designers must not rely on the absence or characteristics of any features or instructions marked "reserved" or "undefined." Intel reserves these for future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to them. The 1.8 Volt Intel® Wireless Flash memory may c.
Performance — 70 ns Asynchronous reads for 32 and 64 Mbit, 90 ns for 128 Mbit — 14 ns Clock to Data Output (tCHQV) — 20 ns Page Mode Read Speed — 4-Word, 8-Word, and Continuous-Word Burst Modes — Burst and Page Modes in Parameter and Main Partitions — Programmable WAIT Configuration — Enhanced Factory Programming Mode@ 3.50 µs/Word (Typ) — Glueless 12 V interface for Fast Factory Programming @ 8 µs/Word (Typ) — 1.8 V Low-Power Programming @ 12 µs/Word (Typ) — Program or Erase during Reads s Architecture — Multiple 4-Mbit Partitions — Dual-Operation: Read-While-Write or ReadWhile-Erase — Eight,.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 28F128W30 |
Intel |
Wireless Flash Memory | |
2 | 28F128 |
Intel |
3 Volt Intel StrataFlash Memory | |
3 | 28F128J3 |
Intel |
(28FxxxJ3) Strata Flash Memory | |
4 | 28F128J3A |
Intel Corporation |
(28FxxxJ3A) Intel StrataFlash Memory | |
5 | 28F128J3C |
Intel |
Strata Flash Memory | |
6 | 28F128L18 |
Intel Corporation |
(28FxxxL18) StrataFlash Wireless Memory | |
7 | 28F128L30 |
Intel Corporation |
(28FxxxL30) Wireless Memory | |
8 | 28F128P30 |
Intel Corporation |
StrataFlash Embedded Memory | |
9 | 28F128P33 |
Intel |
StrataFlash Embedded Memory | |
10 | 28F1000 |
Macronix International |
MX28F1000 | |
11 | 28F102 |
Catalyst Semiconductor |
CAT28F102 | |
12 | 28F160B3 |
Intel |
3 Volt Advanced Boot Block Flash Memory |