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High performance Read-While-Write/Erase — 85 ns initial access — 54 MHz with zero wait state, 14 ns clock-todata output synchronous-burst mode — 25 ns asynchronous-page mode — 4-, 8-, 16-, and continuous-word burst mode — Burst suspend — Programmable WAIT configuration — Buffered Enhanced Factory Programming (BEFP) at 5 µs/byte (Typ) — 1.8 V low-power buffered programming at 7 µs/byte (Typ)
■ Architecture — Asymmetrically-blocked architecture — Multiple 8-Mbit partitions: 64-Mbit and 128Mbit devices — Multiple 16-Mbit partitions: 256-Mbit devices — Four 16-Kword parameter blocks: top or bottom.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 28F128L30 |
Intel Corporation |
(28FxxxL30) Wireless Memory | |
2 | 28F128 |
Intel |
3 Volt Intel StrataFlash Memory | |
3 | 28F128J3 |
Intel |
(28FxxxJ3) Strata Flash Memory | |
4 | 28F128J3A |
Intel Corporation |
(28FxxxJ3A) Intel StrataFlash Memory | |
5 | 28F128J3C |
Intel |
Strata Flash Memory | |
6 | 28F128P30 |
Intel Corporation |
StrataFlash Embedded Memory | |
7 | 28F128P33 |
Intel |
StrataFlash Embedded Memory | |
8 | 28F128W18 |
Intel |
(28FxxxW18) 1.8 V Wireless Flash Memory | |
9 | 28F128W30 |
Intel |
Wireless Flash Memory | |
10 | 28F1000 |
Macronix International |
MX28F1000 | |
11 | 28F102 |
Catalyst Semiconductor |
CAT28F102 | |
12 | 28F160B3 |
Intel |
3 Volt Advanced Boot Block Flash Memory |