The Microchip Technology Inc. 28C17A is a CMOS 16K nonvolatile electrically Erasable PROM. The 28C17A is accessed like a static RAM for the read or write cycles without the need of external components. During a “byte write”, the address and data are latched internally, freeing the microprocessor address and data bus for other operations. Following the initia.
• Fast Read Access Time—150 ns
• CMOS Technology for Low Power Dissipation - 30 mA Active - 100 µA Standby
• Fast Byte Write Time—200 µs or 1 ms
• Data Retention >200 years
• High Endurance - Minimum 104 Erase/Write Cycles
• Automatic Write Operation - Internal Control Timer - Auto-Clear Before Write Operation - On-Chip Address and Data Latches
• Data Polling; Ready/Busy
• Chip Clear Operation
• Enhanced Data Protection - VCC Detector - Pulse Filter - Write Inhibit
• Electronic Signature for Device Identification
• 5-Volt-Only Operation
• Organized 2Kx8 JEDEC Standard Pinout - 28 Pin Dual-In-Li.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 27C1000 |
Macronix |
MX27C1000 | |
2 | 27C1001 |
STMicroelectronics |
1 Mbit 128Kb x8 UV EPROM and OTP EPROM | |
3 | 27C1024 |
ATMEL |
1-Megabit 64K x 16 OTP EPROM | |
4 | 27C1024 |
STMicroelectronics |
1 Mbit 64Kb x16 UV EPROM and OTP EPROM | |
5 | 27C1024 |
Advanced Micro Devices |
1 Megabit (65 K x 16-Bit) CMOS EPROM | |
6 | 27C1024 |
Macronix International |
1M-BIT [128K x 8/64K x 16] CMOS EPROM | |
7 | 27C1028 |
Fujitsu |
MBM27C1028 | |
8 | 27C128 |
General Semiconductor |
128K (16K x 8) CMOS UV Erasable PROM | |
9 | 27C128 |
Cypress Semiconductor |
CY27C128 | |
10 | 27C128 |
Microchip |
128K (16K x 8) CMOS EPROM | |
11 | 27C16 |
National Semiconductor |
UV Erasable CMOS PROM Military Qualified | |
12 | 27C160 |
STMicroelectronics |
16 Mbit 2Mb x8 or 1Mb x16 UV EPROM and OTP EPROM |