www.DataSheet.co.kr Naina Semiconductor emiconductor Ltd. Thyristor – Thyristor Module Features • • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance 25NTT Maximum Ratings (TA = 250C unless otherwise noted) Parameter Maximum average forward current @ TJ =.
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• Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance
25NTT
Maximum Ratings (TA = 250C unless otherwise noted)
Parameter Maximum average forward current @ TJ = 0 85 C Maximum average RMS forward current Maximum non-repetitive surge current @ t = 10ms 2 Maximum I t for fusing @ t = 10ms Symbol IF(AV) IF(RMS) IFSM It
2
Values 25 50 450 1150
Units A A A As
M1 PACKAGE
2
Thermal & Mechanical Specifications (TA = 250C unless otherwise noted)
Parameter Operating junction temperature range Therma.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 25NT |
Naina Semiconductor |
Phase Control Thyristors | |
2 | 25NT100 |
Naina Semiconductor |
Phase Control Thyristors | |
3 | 25NT120 |
Naina Semiconductor |
Phase Control Thyristors | |
4 | 25NT160 |
Naina Semiconductor |
Phase Control Thyristors | |
5 | 25NT20 |
Naina Semiconductor |
Phase Control Thyristors | |
6 | 25NT40 |
Naina Semiconductor |
Phase Control Thyristors | |
7 | 25NT60 |
Naina Semiconductor |
Phase Control Thyristors | |
8 | 25NT80 |
Naina Semiconductor |
Phase Control Thyristors | |
9 | 25NTD |
Naina Semiconductor |
Thyristor-Diode | |
10 | 25N01GVSFIG |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY | |
11 | 25N01GVSFIT |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY | |
12 | 25N01GVTBIG |
Winbond |
3V 1G-BIT SERIAL SLC NAND FLASH MEMORY |