22N50 - Inchange Semiconductor

22N50 N-Channel MOSFET

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 22N50 ·FEATURES ·Drain Current ID= 22A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.25Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch mode power supply. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS V.

Features

·Drain Current ID= 22A@ TC=25℃
·Drain Source Voltage : VDSS= 500V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 0.25Ω(Max)
·Fast Switching
·APPLICATIONS
·Switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 500 ±30 V V ID Drain Current-Continuous 22 A PD Total Dissipation @TC=25℃ 275 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHAN.