22N10 - Inchange Semiconductor

22N10 N-Channel MOSFET

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 22N10 ·FEATURES ·Drain Current ID= 22A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.08Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching regulators ·Switching converters,motor drivers,relay drivers ·ABSOLUTE MAXIMUM RATINGS(T.

Features

·Drain Current ID= 22A@ TC=25℃
·Drain Source Voltage- : VDSS= 100V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 0.08Ω(Max)
·Fast Switching
·APPLICATIONS
·Switching regulators
·Switching converters,motor drivers,relay drivers
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 100 ±30 V V ID Drain Current-Continuous 22 A IDM Drain Current-Single Plused 50 A PD Total Dissipation @TC=25℃ 100 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃
·THERMAL CHARACTERISTICS SY.