20N45 - Inchange Semiconductor

20N45 N-Channel MOSFET

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 20N45 ·FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.27Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch mode power supply. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS V.

Features

·Drain Current ID= 20A@ TC=25℃
·Drain Source Voltage : VDSS= 450V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 0.27Ω(Max)
·Fast Switching
·APPLICATIONS
·Switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 450 ±30 V V ID Drain Current-Continuous 20 A PD Total Dissipation @TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃
·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.25 ℃/W isc.