www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA MOTOROLA Order this document by MGP20N40CL/D Advanced Information SMARTDISCRETES IGBT ™ MGP20N40CL Internally Clamped, N-Channel This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES™ monolithic circuitry .
Gate
–Emitter ESD protection, Gate
–Collector overvoltage protection from SMARTDISCRETES™ monolithic circuitry for usage as an Ignition Coil Driver.
• Temperature Compensated Gate
–Drain Clamp Limits Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage to Interface Power Loads to Logic or Microprocessors
• Low Saturation Voltage
• High Pulsed Current Capability 20 AMPERES VOLTAGE CLAMPED N
–CHANNEL IGBT Vce(on) = 1.8 VOLTS 400 VOLTS (CLAMPED)
®
C
G G Rge C E
E
CASE 221A
–06, Style 9 TO
–220AB
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Collector
–Emitter.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 20N40K-MT |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
2 | 20N431K |
HUAAN |
Metal Oxide Varistor | |
3 | 20N45 |
Inchange Semiconductor |
N-Channel MOSFET | |
4 | 20N470K |
HUAAN |
Metal Oxide Varistor | |
5 | 20N471K |
HUAAN |
Metal Oxide Varistor | |
6 | 20N03 |
INCHANGE |
N-Channel MOSFET | |
7 | 20N03HL |
Motorola |
MTD20N03HL | |
8 | 20N03L |
Infineon Technologies |
IPD20N03L | |
9 | 20N06 |
Inchange Semiconductor |
N-Channel MOSFET | |
10 | 20N06 |
ON Semiconductor |
N-Channel MOSFET | |
11 | 20N10 |
Inchange Semiconductor |
N-Channel MOSFET | |
12 | 20N101K |
HUAAN |
Metal Oxide Varistor |