1SV239 - Toshiba Semiconductor

1SV239 Variable Capacitance Diode

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV239 1SV239 VCO for UHF Radio • Ultra low series resistance: rs = 0.44 Ω (typ.) • Useful for small size set Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Junction temperature Storage temperature range VR 15 V Tj 125 °C Tstg −55~125 °C N.

Features

1E1A Weight: 0.004 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Series resistance Symbol Test Condition VR IR C2 V C10 V C2 V/C10 V rs IR = 1 μA VR = 15 V VR = 2 V, f = 1 MHz VR = 10 V, f = 1 MHz ⎯ VR = 1 V, f = 470 MHz Marking Min Typ. Max Unit 15 ⎯ ⎯ ⎯⎯ 3 3.8 4.25 4.7 1.5 1.75 2.0 2.0 2.4 ⎯ ⎯ 0.44 0.6 V nA pF pF ⎯ Ω 1 2007-11-01 1SV239 (Note) Note: δC = C (Ta) − C C (25) (25) × 100 (%) 2 2007-11-01 1SV239 RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsid.