Ordering number :EN3089B 1SV234 Silicon Epitaxial Type PIN Diode for VHF, UHF, AGC Applications Features · Series connection of 2 elements in an ultrasmall package facilitates high-density mounting and permits 1SV234-applied equipment to be made smaller. · Small interterminal capacitance (C=0.23pF typ). · Small forward series resistance (rs=5Ω typ). Packa.
· Series connection of 2 elements in an ultrasmall package facilitates high-density mounting and permits 1SV234-applied equipment to be made smaller.
· Small interterminal capacitance (C=0.23pF typ).
· Small forward series resistance (rs=5Ω typ).
Package Dimensions
unit:mm 1147A
[1SV234]
1:Anode 2:Cathode 3:Cathode,Anode SANYO:CP
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Reverse Voltage Forward Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VR IF P Tj Tstg Conditions Ratings 50 50 150 125
–55 to +125 Unit V mA mW
˚C ˚C
Electrical C.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 1SV230 |
Toshiba Semiconductor |
Variable Capacitance Diode | |
2 | 1SV231 |
Toshiba Semiconductor |
Variable Capacitance Diode | |
3 | 1SV232 |
Toshiba Semiconductor |
Variable Capacitance Diode | |
4 | 1SV233 |
Sanyo Semicon Device |
PIN Diode | |
5 | 1SV233 |
ON Semiconductor |
Single PIN Diode | |
6 | 1SV237 |
Toshiba Semiconductor |
Diode | |
7 | 1SV239 |
Toshiba Semiconductor |
Variable Capacitance Diode | |
8 | 1SV214 |
Toshiba Semiconductor |
BARIABLE CAPACITANCE DIODE | |
9 | 1SV215 |
Toshiba Semiconductor |
Variable Capacitance Diode | |
10 | 1SV216 |
Toshiba Semiconductor |
Variable Capacitance Diode | |
11 | 1SV217 |
Toshiba Semiconductor |
Variable Capacitance Diode | |
12 | 1SV225 |
Toshiba Semiconductor |
Variable Capacitance Diode |