1SV229 - Toshiba Semiconductor

1SV229 Variable Capacitance Diode

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV229 1SV229 VCO for UHF Band Radio • Ultra low series resistance: rs = 0.2 Ω (typ.) • Useful for small size set Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Junction temperature Storage temperature range VR 15 V Tj 125 °C Tstg −55~125 °.

Features

1-1E1A Weight: 0.004 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Series resistance Symbol Test Condition VR IR C2 V C10 V C2 V/C10 V rs IR = 1 μA VR = 15 V VR = 2 V, f = 1 MHz VR = 10 V, f = 1 MHz ⎯ VR = 5 V, f = 470 MHz Marking Min Typ. Max Unit 15 ⎯ ⎯ V ⎯ ⎯ 3 nA 14 15 16 pF 5.5 6 6.5 pF 2.0 2.5 ⎯ ⎯ ⎯ 0.2 0.4 Ω 1 2007-11-01 1SV229 CAPACITANCE CHANGE RATIO δC (%) (Note) Note: δC = C (Ta) − C C (25) (25) × 100 (%) 2 2007-11-01 1SV229 RESTRICTIONS ON PRODUCT USE
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