1SS294 - Toshiba Semiconductor

1SS294 Silicon Epitaxial Schottky Barrier Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS294 Low Voltage High Speed Switching  AEC-Q101 Qualified (Note1)  Low forward voltage : VF (3) = 0.54V (typ.)  Low reverse surrent : IR = 5μA (max)  Small package : SC−59 Note1: For detail information, please contact to our sales. 1SS294 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Cha.

Features

mperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse current Total capacitance Symbol VF (1) VF (2) VF (3) IR CT Test Condition IF = 1mA IF = 10mA IF = 100mA VR = 40V VR = 0 V, f = 1MHz Min Typ. Max Unit ― 0.28 ― ― 0.36 ― V ― 0.54 0.60 .