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1SS294 |
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| Part Number | 1SS294 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS294 Low Voltage High Speed Switching AEC-Q101 Qualified (Note1) Low forward voltage : VF (3) = 0.54V (typ.) Low reverse surrent : I... |
| Features |
mperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage Reverse current Total capacitance
Symbol
VF (1) VF (2) VF (3)
IR CT
Test Condition
IF = 1mA IF = 10mA IF = 100mA VR = 40V VR = 0 V, f = 1MHz
Min Typ. Max Unit
― 0.28 ―
― 0.36 ―
V
― 0.54 0.60
... |
| Document |
 1SS294 Data Sheet
PDF 341.71KB |
| Distributor | Stock | Price | Buy |
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