• 1N5819UR-1 AND 1N6761UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/586 • 1 AMP SCHOTTKY BARRIER RECTIFIERS • HERMETICALLY SEALED • LEADLESS PACKAGE FOR SURFACE MOUNT • METALLURGICALLY BONDED 1N5819UR and CDLL5817 thru CDLL5819 and CDLL6759 thru CDLL6761 and CDLL1A20 thru CDLL1A100 MAXIMUM RATINGS Operating Temperature: -55°C to +125°C S.
0.8 N/A N/A N/A N/A 0.9 0.9 0.9 0.9 N/A N/A N/A MAXIMUM REVERSE LEAKAGE CURRENT AT RATED VOLTAGE IR @ +25°C mA 0.1 0.1 0.1 0.05 0.1 0.1 0.1 0.10 0.1 0.1 0.1 0.1 0.1 0.1 0.1 IR @ +100°C mA 5.0 5.0 5.0 5.0 6.0 6.0 6.0 12.0 5.0 5.0 5.0 5.0 12.0 12.0 12.0 FIGURE 1 DESIGN DATA CASE: DO-213AB, Hermetically sealed glass case. (MELF, LL41) LEAD FINISH: Tin / Lead THERMAL RESISTANCE: (ROJEC): 40 ˚C/W maximum at L = 0 inch THERMAL IMPEDANCE: (ZOJX): 12 ˚C/W maximum POLARITY: Cathode end is banded. MOUNTING SURFACE SELECTION: The Axial Coefficient of Expansion (COE) Of this Device is Approximately +6.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 1N5819U |
ST Microelectronics |
Aerospace 45V 1A Schottky diode | |
2 | 1N5819UR-1 |
Sensitron |
SCHOTTKY BARRIER DIODE | |
3 | 1N5819 |
STMicroelectronics |
Low drop power Schottky rectifier | |
4 | 1N5819 |
NXP |
Schottky barrier diodes | |
5 | 1N5819 |
MotorolaInc |
SCHOTTKY BARRIER RECTIFIERS | |
6 | 1N5819 |
Diodes |
1.0A SCHOTTKY BARRIER RECTIFIER | |
7 | 1N5819 |
Vishay Siliconix |
Schottky Barrier Rectifiers | |
8 | 1N5819 |
PAN JIT |
SCHOTTKY BARRIER RECTIFIERS | |
9 | 1N5819 |
WON-TOP |
1.0A SCHOTTKY BARRIER DIODE | |
10 | 1N5819 |
AiT Components |
SCHOTTKY DIODES | |
11 | 1N5819 |
Kexin |
Schottky Barrier Rectifier Diodes | |
12 | 1N5819 |
Taiwan Semiconductor |
Schottky Barrier Rectifiers |