The 1N5819U Schottky diode is ESCC qualified. It is housed in a surface mount hermetically sealed ceramic LCC-2B package whose footprint is fully compatible with industry standard as D5B. Its full planar technology allows superior performances and high reliability up to 150 °C junction temperature. This diode is ESCC qualified, which makes it eligible for us.
• Low forward voltage drop: VF = 0.49 V at 1 A and +25 °C
• Very small conduction losses
• Ultrafast switchings with negligible losses
• High thermal conductivity materials
• Surface mount hermetic package
• Radiation performance
– 150 krad (Si) low dose rate
– 3 Mrad (Si) high dose rate
• ESCC qualified: detail specification 5106/021
Applications
• Satellite and spacecraft power systems
• Switch mode power supply
• 5 V flyback or forward converter output rectification
• DC motor chopper free wheeling diode
• Reverse polarity protection
• Redundancy OR-Ing diode
Description
The 1N5819U Schottk.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 1N5819 |
STMicroelectronics |
Low drop power Schottky rectifier | |
2 | 1N5819 |
NXP |
Schottky barrier diodes | |
3 | 1N5819 |
MotorolaInc |
SCHOTTKY BARRIER RECTIFIERS | |
4 | 1N5819 |
Diodes |
1.0A SCHOTTKY BARRIER RECTIFIER | |
5 | 1N5819 |
Vishay Siliconix |
Schottky Barrier Rectifiers | |
6 | 1N5819 |
PAN JIT |
SCHOTTKY BARRIER RECTIFIERS | |
7 | 1N5819 |
WON-TOP |
1.0A SCHOTTKY BARRIER DIODE | |
8 | 1N5819 |
AiT Components |
SCHOTTKY DIODES | |
9 | 1N5819 |
Kexin |
Schottky Barrier Rectifier Diodes | |
10 | 1N5819 |
Taiwan Semiconductor |
Schottky Barrier Rectifiers | |
11 | 1N5819 |
NTE |
Schottky Barrier Rectifier | |
12 | 1N5819 |
Fairchild Semiconductor |
Schottky Barrier Rectifier |