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www.vishay.com 1N5059GP, 1N5060GP, 1N5061GP, 1N5062GP Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier SUPERECTIFIER® DO-204AC (DO-15) FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current • High forward surge capability • Solder.
• Superectifier structure for high reliability
application
• Cavity-free glass-passivated junction
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM
IR VF TJ max. Package
1.0 A 200 V, 400 V, 600 V, 800 V
50 A 5.0 μA 1.2 V 175 °C DO-204AC (DO-15)
Diode variations
Single die
TYPICAL APPLICATIONS For use in general purpose rectification of power supplies, inverters, converters, and.
1N5059GP - General Semiconductor
1N5059GP THRU 1N5062GP GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts D * DO-204AC 0.034 (0.86) .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 1N5059 |
General Semiconductor |
GLASS PASSIVATED JUNCTION RECTIFIER |
|
| 2 | 1N5059 |
NXP |
Controlled avalanche rectifiers |
|
| 3 | 1N5059 |
Diotec Semiconductor |
Silicon Rectifiers |
|
| 4 | 1N5059 |
Vishay |
Standard Avalanche Sinterglass Diode |
|
| 5 | 1N5059 |
LGE |
Plastic Silicon Rectifier |
|
| 6 | 1N5059 |
Central Semiconductor |
GLASS PASSIVATED SILICON RECTIFIERS |
|
| 7 | 1N5059 |
Digitron Semiconductors |
STANDARD AVALANCHE DIODE |
|
| 8 | 1N5059 |
NTE |
General Purpose Silicon Rectifier |
|
| 9 | 1N5051A |
Central Semiconductor |
Zener Diodes |
|
| 10 | 1N50 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 11 | 1N50-CB |
UTC |
N-CHANNEL POWER MOSFET |
|
| 12 | 1N50-KW |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|