1N5059 to 1N5062 Rugged glass package, using a high temperature alloyed construction. 2/3 page k (Datasheet) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM 1N5059 1N5060 1N5061 1N5062 VRWM crest working reverse voltage 1N5059 1N5060 1N5061 1N5062 VR continuous reverse voltage 1N5059 1N5060 1N5061 1N5062 IF(AV.
• Glass passivated
• High maximum operating temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy absorption capability
• Available in ammo-pack. DESCRIPTION
1N5059 to 1N5062
Rugged glass package, using a high temperature alloyed construction.
2/3 page k (Datasheet)
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM 1N5059 1N5060 1N5061 1N5062 VRWM crest working reverse voltage 1N5059 1N5060 1N5061 1N5062 VR continuous reverse voltage 1N5059 1N5060 1N5061 1N5062 IF(AV) average forward current PARAMETER repetitive pea.
1N5059-1N5062 High-reliability discrete products and engineering services since 1977 STANDARD AVALANCHE DIODE FEATURE.
1N5059 thru 1N5062 General Purpose Silicon Rectifier Fast Recovery Features: D Controlled Avalanche Characteristics D Lo.
1N5059 THRU 1N5062 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts D TE * DO-204AP Forward Curre.
1N 5059 … 1N 5062 Silicon Rectifiers Silizium Gleichrichter Nominal current – Nennstrom Repetitive peak reverse voltage.
1N5059-1N5062 Plastic Silicon Rectifier VOLTAGE RANGE: 200---800 V CURRENT: 2.0 A Features Low cost Diffus ed junction.
The CENTRAL SEMICONDUCTOR 1N5059 series types are silicon rectifiers manufactured in a hermetically sealed, glass passi.
www.vishay.com 1N5059, 1N5060, 1N5061, 1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode 949539 DESIG.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 1N5051A |
Central Semiconductor |
Zener Diodes | |
2 | 1N5059GP |
Vishay |
Glass Passivated Junction Plastic Rectifier | |
3 | 1N5059GP |
General Semiconductor |
GLASS PASSIVATED JUNCTION RECTIFIER | |
4 | 1N50 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
5 | 1N50-CB |
UTC |
N-CHANNEL POWER MOSFET | |
6 | 1N50-KW |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
7 | 1N5000 |
Microsemi Corporation |
Silicon Rectifiers | |
8 | 1N5001 |
Microsemi Corporation |
Silicon Rectifiers | |
9 | 1N5002 |
Microsemi Corporation |
Silicon Rectifiers | |
10 | 1N5003 |
Microsemi Corporation |
Silicon Rectifiers | |
11 | 1N5008A |
New Jersey Semi-Conductor |
(1N5008A - 1N5042A) DIODE | |
12 | 1N5009A |
New Jersey Semi-Conductor |
(1N5008A - 1N5042A) DIODE |