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• 1N4150UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231 • SWITCHING DIODE • HERMETICALLY SEALED • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION 1N4150UR-1 1N3600UR CDLL4150 CDLL3600 MAXIMUM RATINGS Junction Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 300 mA @ TA = + 25°C Derating: 3.1 mA dc/°C Abo.
-80; LL34)
FORWARD VOLTAGE LIMITS
– ALL TYPES
V F1 Limits I F = 1 mA dc V F2 I F = 10 mA dc V F3 I F = 50 mA dc (Pulsed) V dc 0.780 0.860 V F4 I F = 100 mA dc (Pulsed) V dc 0.820 0.920 V F5
LEAD FINISH: Tin / Lead
I F = 200 mA dc (Pulsed) V dc 0.870 1.000
V dc minimum maximum 0.540 0.620
V dc 0.680 0.740
THERMAL RESISTANCE (ROJEC): 100 °C/W maximum AT L = 0 THERMAL IMPEDANCE: (ZOJX): 70 ˚C/W maximum POLARITY: Cathode end is banded. MOUNTING SURFACE SELECTION: The Axial Coefficient of Expansion (COE) Of this Device is Approximately +6PPM/°C. The COE of the Mounting Surface System Should Be.
1N4150UR-1 - Microsemi
1N4150UR-1 FEATURES • 1N4150UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF- 19500/231 • SWITCHING DIODE • METALLU.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 1N4150 |
Vishay Telefunken |
Small Signal Fast Switching Diodes |
|
| 2 | 1N4150 |
Diotec Semiconductor |
Silicon Planar Diodes |
|
| 3 | 1N4150 |
EIC |
HIGH SPEED SWITCHING DIODE |
|
| 4 | 1N4150-1 |
Compensated Deuices Incorporated |
SWITCHING DIODES |
|
| 5 | 1N4150-1 |
MA-COM |
Silicon Switching Diode |
|
| 6 | 1N4150-1 |
Microsemi |
SWITCHING DIODE |
|
| 7 | 1N4150-1 |
Aeroflex |
Silicon Switching Diodes |
|
| 8 | 1N4150W |
Vishay |
Small Signal Fast Switching Diode |
|
| 9 | 1N4150W |
WON-TOP |
SURFACE MOUNT FAST SWITCHING DIODE |
|
| 10 | 1N4150W |
Kexin |
SMALL SIGNAL DIODES |
|
| 11 | 1N4150W |
Pan Jit International Inc. |
SURFACE MOUNT SWITCHING DIODES |
|
| 12 | 1N4150W-G |
Vishay |
Small Signal Fast Switching Diode |
|