1N3600, 1N4150 & 1N4150-1 Silicon Switching Diode Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/231 Metallurgically Bonded Hermetically Sealed Double Plug Construction Maximum Ratings Operating & Storage Temperature: -65°C to +175°C Operating Current: 300 mA @ TA = +25°C Derating: 2 mA DC/°C above TL = +75°C @ L = 3/8” Surge Current .
Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/231
Metallurgically Bonded
Hermetically Sealed
Double Plug Construction
Maximum Ratings
Operating & Storage Temperature: -65°C to +175°C Operating Current: 300 mA @ TA = +25°C Derating: 2 mA DC/°C above TL = +75°C @ L = 3/8” Surge Current A: 2 A (pk) tP = 8.3 ms, VRM = 0 Surge Current B: 4 A (pk) tP = 1 µs, VRM = 0
Rev. V1
Electrical Specifications @ +25°C (unless otherwise Specified)
TYPE #
VBR IR = 10 μA
VRWM
1N3600 1N4150, -1
V dc 75 75
V (pk) 50 50
IR1 VR = 50 Vdc
TA = 25°C
μA dc 0.1 0.1
IR2 VR = 50 Vdc TA =150°C
μA dc.
Silicon Switching Diodes 1N4150, 1N4150-1 & 1N3600 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/231.
1N4150-1 FEATURES • 1N4150-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF- 19500/231 • SWITCHING DIODE • METALLURGIC.
• 1N4150-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231 • 1N3600 AVAILABLE IN JAN, JANTX, AND JANTXV PER MI.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 1N4150 |
Vishay Telefunken |
Small Signal Fast Switching Diodes | |
2 | 1N4150 |
Diotec Semiconductor |
Silicon Planar Diodes | |
3 | 1N4150 |
EIC |
HIGH SPEED SWITCHING DIODE | |
4 | 1N4150UR-1 |
Compensated Deuices Incorporated |
SWITCHING DIODE | |
5 | 1N4150UR-1 |
Microsemi |
SWITCHING DIODE | |
6 | 1N4150W |
Vishay |
Small Signal Fast Switching Diode | |
7 | 1N4150W |
WON-TOP |
SURFACE MOUNT FAST SWITCHING DIODE | |
8 | 1N4150W |
Kexin |
SMALL SIGNAL DIODES | |
9 | 1N4150W |
Pan Jit International Inc. |
SURFACE MOUNT SWITCHING DIODES | |
10 | 1N4150W-G |
Vishay |
Small Signal Fast Switching Diode | |
11 | 1N4150W-V |
Vishay |
Small Signal Switching Diode | |
12 | 1N4151 |
Central Semiconductor |
Silicon Switching Diode |