Silicon Standard Recovery Diode Features • High Surge Capability • Types from 800 V to 1000 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N3671A thru 1N3673AR VRRM = 800 V - 1000 V IF = 12 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter .
• High Surge Capability
• Types from 800 V to 1000 V VRRM
• Not ESD Sensitive
Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base.
1N3671A thru 1N3673AR
VRRM = 800 V - 1000 V IF = 12 A
DO-4 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current
Surge non-repetitive forward current, Half Sine Wave
Operating temperature Storage temperature
VRRM VRMS VDC
IF
IF,SM
Tj Tstg
TC ≤ 150 °C TC = 25 °C, tp = 8.3 .
Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 1N3673A |
GeneSiC |
Silicon Standard Recovery Diode | |
2 | 1N3673A |
Vishay |
Medium Power Silicon Rectifier Diodes | |
3 | 1N3673A |
Solid State |
POWER RECTIFIER | |
4 | 1N3673A |
ETC |
Silicon Rectifiers | |
5 | 1N3673A |
Digitron Semiconductors |
STANDARD RECOVERY RECTIFIER | |
6 | 1N3673A |
International Rectifier |
(1N3670A - 1N3673A) 12 AMP MEDIUM POWER SILICON RECTIFIER DIODES | |
7 | 1N3673A |
America Semiconductor |
Silicon Standard Recovery Diode | |
8 | 1N3673A |
DSI |
DIODE | |
9 | 1N3673A-M |
DSI |
DIODE | |
10 | 1N3673 |
Diotec Semiconductor |
Silicon-Power Rectifiers | |
11 | 1N3673 |
Solid State |
POWER RECTIFIER | |
12 | 1N3673 |
Digitron Semiconductors |
STANDARD RECOVERY RECTIFIER |