Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
1N 1199A ... 1N 1206A, 1N 3671, 1N 3673 PBY 271 ... PBY 277 Silicon-Power Rectifiers Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Metal case – Metallgehäuse Weight approx. – Gewicht ca. Recommended mounting torque Empfohlenes Anzugsdrehmoment Silizium-Leistungs-Gleichrichter 12 A 50...1000 V DO-4 5.5 g 18 ± 10%.
Dauergrenzstrom in Einwegschaltung mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Peak forward surge current, 60 Hz half sine-wave Stoßstrom für eine 60 Hz Sinus-Halbwelle Rating for fusing
– Grenzlastintegral, t < 10 ms
IFAV IFRM IFSM IFSM i2t
) Valid, if the temp. of the stud is kept to 100/C
– Gültig, wenn die Temp. am Gewinde auf 100/C gehalten wird 26.03.2002
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1N 1199A ... 1N 1206A, 1N 3671, 1N 3673 PBY 271 ... PBY 277 Operating junction temperature
– Sperrschichttemperat.
1N3673 - Digitron Semiconductors
1N3670A-1N3673A High-reliability discrete products and engineering services since 1977 STANDARD RECOVERY RECTIFIER FE.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 1N3670 |
Solid State |
POWER RECTIFIER |
|
| 2 | 1N3670 |
Digitron Semiconductors |
STANDARD RECOVERY RECTIFIER |
|
| 3 | 1N3670A |
Vishay |
Medium Power Silicon Rectifier Diodes |
|
| 4 | 1N3670A |
Solid State |
POWER RECTIFIER |
|
| 5 | 1N3670A |
ETC |
Silicon Rectifiers |
|
| 6 | 1N3670A |
Digitron Semiconductors |
STANDARD RECOVERY RECTIFIER |
|
| 7 | 1N3670A |
International Rectifier |
(1N3670A - 1N3673A) 12 AMP MEDIUM POWER SILICON RECTIFIER DIODES |
|
| 8 | 1N3670RA |
ETC |
Silicon Rectifiers |
|
| 9 | 1N3671 |
Diotec Semiconductor |
Silicon-Power Rectifiers |
|
| 10 | 1N3671 |
Solid State |
POWER RECTIFIER |
|
| 11 | 1N3671 |
Digitron Semiconductors |
STANDARD RECOVERY RECTIFIER |
|
| 12 | 1N3671A |
GeneSiC |
Silicon Standard Recovery Diode |
|
