1N 1199A ... 1N 1206A, 1N 3671, 1N 3673 PBY 271 ... PBY 277 Silicon-Power Rectifiers Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Metal case – Metallgehäuse Weight approx. – Gewicht ca. Recommended mounting torque Empfohlenes Anzugsdrehmoment Silizium-Leistungs-Gleichrichter 12 A 50...1000 V DO-4 5.5 g 18 ± 10%.
Dauergrenzstrom in Einwegschaltung mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Peak forward surge current, 60 Hz half sine-wave Stoßstrom für eine 60 Hz Sinus-Halbwelle Rating for fusing
– Grenzlastintegral, t < 10 ms
IFAV IFRM IFSM IFSM i2t
) Valid, if the temp. of the stud is kept to 100/C
– Gültig, wenn die Temp. am Gewinde auf 100/C gehalten wird 26.03.2002
1
1
1N 1199A ... 1N 1206A, 1N 3671, 1N 3673 PBY 271 ... PBY 277 Operating junction temperature
– Sperrschichttemperat.
1N3670A-1N3673A High-reliability discrete products and engineering services since 1977 STANDARD RECOVERY RECTIFIER FE.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 1N3670 |
Solid State |
POWER RECTIFIER | |
2 | 1N3670 |
Digitron Semiconductors |
STANDARD RECOVERY RECTIFIER | |
3 | 1N3670A |
Vishay |
Medium Power Silicon Rectifier Diodes | |
4 | 1N3670A |
Solid State |
POWER RECTIFIER | |
5 | 1N3670A |
ETC |
Silicon Rectifiers | |
6 | 1N3670A |
Digitron Semiconductors |
STANDARD RECOVERY RECTIFIER | |
7 | 1N3670A |
International Rectifier |
(1N3670A - 1N3673A) 12 AMP MEDIUM POWER SILICON RECTIFIER DIODES | |
8 | 1N3670RA |
ETC |
Silicon Rectifiers | |
9 | 1N3671A |
GeneSiC |
Silicon Standard Recovery Diode | |
10 | 1N3671A |
Vishay |
Medium Power Silicon Rectifier Diodes | |
11 | 1N3671A |
Solid State |
POWER RECTIFIER | |
12 | 1N3671A |
ETC |
Silicon Rectifiers |