1N3580I A, Bthru 1N3583I A, B For Specifications, See 1N2163 Data. 1N3649.1 N3650 Obsolete, discontinued types, replace with devices from the MRl120 series. 1N3659thru 1N3663 (SILICON) CASE 43 (00.21) Low-cost silicon rectifiers in hermetically sealed, press-fit case, designed for operation under severe environmental conditions. Cathode connected to cas.
Amp Amp °c °c ELECTRICAL CHARACTERISTICS Characteristic Maximum Forward Voltage at 25 Amp DC Forward Current Maximum Full Cycle Average Forward Voltage Drop @ Rated PlV and Current Maximum Full Cycle Average Reverse Current @ Rated PlV and Current (as half-wave rectifier, resistive load, 150°C) Symbol VF VF(AV) ~(AV) IN_ lN3&59R 1.2 0.7 5.0 Thermal Resistance 8JC IN_ 1113&&1 11136&2 lN3&&3 IN_R IN3&61R lN3&62R 1113. 1.2 1.2 1.2 1.2 0.'1 0.7 0.7 0.7 4.5 4.0 3.5 3.0 1.0 Unit Volts Volts rnA °C!W 1-55 1N3659 thru 1N3663 (continued) 40 30 35 '" r--... 1500 C 250 C ......
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 1N3657 |
Semtech Corporation |
(1N3611 - 1N3957) Standard Recovery Rectifier Diode | |
2 | 1N3659R |
Motorola |
Low-cost silicon rectifiers | |
3 | 1N3600 |
Digitron Semiconductors |
SWITCHING RECTIFIERS | |
4 | 1N3600 |
Microsemi |
Switching Diodes | |
5 | 1N3600 |
MA-COM |
Silicon Switching Diode | |
6 | 1N3600 |
NTE |
High Conductance Ultra Fast Diode | |
7 | 1N3600UR |
Compensated Deuices Incorporated |
SWITCHING DIODE | |
8 | 1N3600UR |
Microsemi Corporation |
SWITCHING DIODE | |
9 | 1N3604 |
Central |
(1N3xxx) Silicon Diodes | |
10 | 1N3605 |
Central |
(1N3xxx) Silicon Diodes | |
11 | 1N3611 |
Vishay |
Glass Passivated Rectifiers | |
12 | 1N3611 |
Digitron Semiconductors |
STANDARD RECOVERY RECTIFIERS |