Quick reference data VR = IO = trr = V = F 1N3611, 1N3612, 1N3613, 1N3614, 1N3957 Axial Leaded Hermetically Sealed Standard Recovery Rectifier Diode Features Low reverse leakage current Hermetically sealed in Metoxilite fused metal oxide Good thermal shock resistance Low forward voltage drop Avalanche capability 200 - 1000 V 1.0A 2µS 1.1V These .
Low reverse leakage current Hermetically sealed in Metoxilite fused metal oxide Good thermal shock resistance Low forward voltage drop Avalanche capability 200 - 1000 V 1.0A 2µS 1.1V These products can be supplied as JANTX levels. Electrical Specifications Electrical specifications @ TA = 25°C unless otherwise specified. Types VRWM VF IO IFSM IR TRR T S TG an d T J R θ JL L=.375 inch (9.53mm) At: T J = 25°C IO = 1A At: TA = +100°C (1)(2) At: TA = +150°C (1)(2) TA = +25°C IO = 1 A dc tp = 8.0ms VRWM, TJ = 25°C 0.5A IO to 1.0A IRM recover to 0.25A IRM (REC) µS 2 2 2 2.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 1N3659 |
Motorola |
Low-cost silicon rectifiers | |
2 | 1N3659R |
Motorola |
Low-cost silicon rectifiers | |
3 | 1N3600 |
Digitron Semiconductors |
SWITCHING RECTIFIERS | |
4 | 1N3600 |
Microsemi |
Switching Diodes | |
5 | 1N3600 |
MA-COM |
Silicon Switching Diode | |
6 | 1N3600 |
NTE |
High Conductance Ultra Fast Diode | |
7 | 1N3600UR |
Compensated Deuices Incorporated |
SWITCHING DIODE | |
8 | 1N3600UR |
Microsemi Corporation |
SWITCHING DIODE | |
9 | 1N3604 |
Central |
(1N3xxx) Silicon Diodes | |
10 | 1N3605 |
Central |
(1N3xxx) Silicon Diodes | |
11 | 1N3611 |
Vishay |
Glass Passivated Rectifiers | |
12 | 1N3611 |
Digitron Semiconductors |
STANDARD RECOVERY RECTIFIERS |