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Technical Data TRANSISTOR maximum ratings Voltage, Collector to Base (VCBO) Voltage, Collector to Emitter (VCE) Voltage, Emitter to Base (VEBO) Collector Current (IC) Base Current (IB) Max. Power Dissipation (PT) at TC = 25 °C Max. Thermal Resistance (Rth J-C) Max. Junction Temperature (TJ) empty 500.0 V 250.0 V 10.0 V 6.0 A 3.0 A 87.5 W 2.0 °C/W 200.0 °C.
.0 µs 11. tOFF IC = 5.0 A, IB = 1.0 A - 6.0 µs 12. 13. 14. 15. 16. 17. 18. 19. 20. Notes (1)pulse-tested tp ≤ 300 µs, duty cycle ≤ 2 % empty empty empty DIMENSIONS in mm Marking 185T2C Customer GENERAL PURPOSE .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 185T2 |
Comset Semiconductor |
NPN SILICON TRANSISTORS |
|
| 2 | 185T2B |
DSI |
TRANSISTOR |
|
| 3 | 1852 |
TUNG-SOL |
Pentode |
|
| 4 | 1853 |
TUNG-SOL |
TV Amplifier Pentode |
|
| 5 | 185N10F3 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 6 | 185N55F3 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 7 | 185NQ015 |
International Rectifier |
SCHOTTKY RECTIFIER |
|
| 8 | 185PC05DT |
Honeywell |
Pressure Sensors |
|
| 9 | 185PC15AT |
Honeywell |
Pressure Sensors |
|
| 10 | 185PC15DT |
Honeywell |
Pressure Sensors |
|
| 11 | 185PC30AT |
Honeywell |
Pressure Sensors |
|
| 12 | 185PC30DT |
Honeywell |
Pressure Sensors |
|