This device is an N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. S(2, 3) Order code STH185N10F3-2 AM01475v5 Table 1: Device summary Marking Packages 185N10F3 H2PAK-2 Packing Tape and reel October 2016 DocID026910 Rev 3 This is infor.
Order code STH185N10F3-2
VDS 100 V
RDS(on) max. 4.5 mΩ
ID 180 A
Figure 1: Internal schematic diagram D(TAB)
G(1)
AEC-Q101 qualified
Ultra low on-resistance
100% avalanche tested
Applications
Switching applications
Description
This device is an N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance.
S(2, 3)
Order code STH185N10F3-2
AM01475v5
Table 1: Device summary
Marking
Packages
185N10F3
H2PAK-2
Packing Tape and reel
October 2016
DocID026910 Rev 3
This is inform.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 185N55F3 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
2 | 185NQ015 |
International Rectifier |
SCHOTTKY RECTIFIER | |
3 | 1852 |
TUNG-SOL |
Pentode | |
4 | 1853 |
TUNG-SOL |
TV Amplifier Pentode | |
5 | 185PC05DT |
Honeywell |
Pressure Sensors | |
6 | 185PC15AT |
Honeywell |
Pressure Sensors | |
7 | 185PC15DT |
Honeywell |
Pressure Sensors | |
8 | 185PC30AT |
Honeywell |
Pressure Sensors | |
9 | 185PC30DT |
Honeywell |
Pressure Sensors | |
10 | 185T2 |
Comset Semiconductor |
NPN SILICON TRANSISTORS | |
11 | 185T2B |
DSI |
TRANSISTOR | |
12 | 185T2C |
DSI |
TRANSISTOR |