R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. 13007T Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1.APPLICATION Fluorescent Lamp、Electronic Ballast、 Computer Switch Power Supply 2.FEATURES High voltage capability Features of good high temperature High switching speed 3.PACKAGE TO-220 4.Electrical Characteristics 4.1 Absolute Maximum R.
High voltage capability Features of good high temperature High switching speed 3.PACKAGE TO-220 4.Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emittor Voltage Emittor- Base Voltage Collector Current Power Dissipation Ta=25℃ Tc=25℃ Junction Temperature Storage Temperature 4.2 Electrical Parameter Tamb= 25℃ unless specified PARAMETER Collector-Base Voltage Collector-Emittor Voltage Emittor-Base Voltage Collector-Base Cutoff Current Collector-.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 13007 |
Trea Sure Star |
NPN Silicon Transistor | |
2 | 13007 |
Micro Electronics |
NPN Transistor | |
3 | 13007 |
Jiangsu Changjiang |
NPN Transistor | |
4 | 13007 |
Elite |
NPN Epitaxial Silicon Transistor | |
5 | 13007A |
Mospec Semiconductor |
MJE13007A | |
6 | 13007B |
TSC |
TS13007B | |
7 | 13007DL |
Jingdao |
Bipolar Junction Transistor | |
8 | 13007N |
STMicroelectronics |
ST13007N | |
9 | 13007S |
Jingdao |
Bipolar Junction Transistor | |
10 | 1300 |
Nihon Dempa Kogyo |
Crystal Clock Oscillators | |
11 | 1300-102-4xx |
Methode Electronics |
2.54mm IDC Connector | |
12 | 13001 |
Elite |
NPN Epitaxial Silicon Transistor |