13007N - STMicroelectronics

13007N ST13007N

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. They use a Cellular Emitter structure to enhance switching speeds. 1 2 3 1 2 3 TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEV V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter ST1.

Features

16 4 8 80 -65 to 150 150 33 Uni t V V V A A A A W o o C C March 1999 1/7 Free Datasheet http://www.datasheet4u.net/ ST13007N / ST13007NFP THERMAL DATA T O- 220 R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-Ambient Max Max 1.56 62.5 T O-220F P 3.8 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CEV I EBO Parameter Collector Cut-off Current (V BE = -1.5V) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = rated V CEV V CE = rated V CEV V EB = 9 V I C = 10 mA IC IC IC IC = = = = 2 5 8 5 A A A .