110N2 - VBsemi

110N2 N-Channel MOSFET

110N2-VB 110N2-VB Datasheet N-Channel 20-V (D-S)175 _C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.0045 @ VGS = 4.5 V 20 0.006 @ VGS = 2.5 V ID (A)a 100 90 TO-252 FEATURES D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested D G GDS Top View Drain Connected to Tab S N-Channel MOSFET ABSOLUTE MAXIMUM RA.

Features

D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested D G GDS Top View Drain Connected to Tab S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25_C TC = 100_C TC = 25_C TA = 25_C VDS VGS ID IDM IS PD TJ, Tstg 20 "15 100 80 200 65 71 8.3b, c - 55 to 175 Unit V A W _C THERMAL RESISTANCE RATINGS.