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S(1, 2, 3) 12 34 Top View AM15540v2 This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status link STL110N10F7 Product summary Order code STL110N10F7 Ma.
PowerFLAT 5x6
Order code
VDS
RDS(on) max.
STL110N10F7
100 V
6 mΩ
• Among the lowest RDS(on) on the market
• Excellent FoM (figure of merit)
• Low Crss/Ciss ratio for EMI immunity
• High avalanche ruggedness
ID 107 A
PTOT 136 W
D(5, 6, 7, 8)
8 76 5
Applications
• Switching applications
G(4)
Description
S(1, 2, 3)
12 34 Top View
AM15540v2
This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
.
110N10F7 - VBsemi
110N10F7-VB 110N10F7-VB Datasheet N-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 110N2 |
VBsemi |
N-Channel MOSFET |
|
| 2 | 110NS3LL |
STMicroelectronics |
N-channel MOSFET |
|
| 3 | 1100 |
Cherry Semiconductor |
Semi-Custom IC |
|
| 4 | 1100-8-104-01 |
Methode Electronics |
Header Connector |
|
| 5 | 1100-8-1xx-01 |
Methode Electronics |
Header Connector |
|
| 6 | 11016 |
California Micro Devices |
PRN110 |
|
| 7 | 1102B |
VMI |
(1102xB - 1110xB) Single Phase Bridge |
|
| 8 | 1102C |
VMI |
(1102xC - 1110xC) Single Phase Bridge |
|
| 9 | 1102D |
VMI |
(1102xD - 1110xD) Single Phase Bridge |
|
| 10 | 1102E |
VMI |
(1102xE - 1110xE) Single Phase Bridge |
|
| 11 | 1102F |
VMI |
(1102xF - 1110xF) Single Phase Bridge |
|
| 12 | 1102FB |
VMI |
(1102xB - 1110xB) Single Phase Bridge |
|