These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well.
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• 9.5A, 200V, RDS(on) = 0.36Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 40.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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G! G DS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQP10N20C 9.5 6.0 38
FQPF10N20C 200 9.5
* 6.0
* 38
* ± 30 210 9.5 7.2 5.5
Units V A A A V mJ A mJ .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 10N20 |
Fairchild Semiconductor |
FQB10N20 | |
2 | 10N03L |
Infineon Technologies AG |
IPP10N03L | |
3 | 10N100-FL |
UTC |
1000V N-CHANNEL POWER MOSFET | |
4 | 10N12 |
INCHANGE |
N-Channel MOSFET | |
5 | 10N120BND |
Fairchild Semiconductor |
HGTG10N120BND | |
6 | 10N15 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
7 | 10N30 |
UTC |
300V N-CHANNEL POWER MOSFET | |
8 | 10N361K |
RFE international |
JVR10N361K | |
9 | 10N3L |
STMicroelectronics |
N-channel Power MOSFET | |
10 | 10N40 |
UTC |
N-CHANNEL POWER MOSFET | |
11 | 10N431K |
RGA |
MHS10N431K | |
12 | 10N45 |
INCHANGE |
N-Channel MOSFET |