The UTC 10N100-FL is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. FEATURES *.
* RDS(ON) ≤ 1.9 Ω @ VGS=10V, ID=5.0A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
10N100L-TF1-T
10N100G-TF1-T
10N100L-TF2-T
10N100G-TF2-T
10N100L-TF3-T
10N100G-TF3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1 TO-220F2 TO-220F
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
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MARKING
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QW-R205-764.A
10N100-FL
Power MOSFE.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 10N12 |
INCHANGE |
N-Channel MOSFET | |
2 | 10N120BND |
Fairchild Semiconductor |
HGTG10N120BND | |
3 | 10N15 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
4 | 10N03L |
Infineon Technologies AG |
IPP10N03L | |
5 | 10N20 |
Fairchild Semiconductor |
FQB10N20 | |
6 | 10N20C |
Fairchild Semiconductor |
FQP10N20C | |
7 | 10N30 |
UTC |
300V N-CHANNEL POWER MOSFET | |
8 | 10N361K |
RFE international |
JVR10N361K | |
9 | 10N3L |
STMicroelectronics |
N-channel Power MOSFET | |
10 | 10N40 |
UTC |
N-CHANNEL POWER MOSFET | |
11 | 10N431K |
RGA |
MHS10N431K | |
12 | 10N45 |
INCHANGE |
N-Channel MOSFET |