015AZ4.7 - Toshiba Semiconductor

015AZ4.7 Silicon Diode

015AZ2.0~015AZ12 TOSHIBA Diode Silicon Epitaxial Planar Type 015AZ2.0~015AZ12 Constant Voltage Regulation Applications Unit: mm l Small package l Nominal voltage tolerance about ±2.5% (2.0V~12V) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Power dissipation P* 150 Junction temperature Tj 125 Storage temperature range Tstg -55~125 *.

Features

Z X 015AZ5.6 Y Z X 015AZ6.2 Y Z X 015AZ6.8 Y Z
* : Test time: t = 30ms
*
* : Product by order. 1.85 1.95 2.05 2.16 2.28 2.40 2.50 2.65 2.80 2.95 3.10 3.25 3.40 3.55 3.70 3.87 4.00 4.13 4.25 4.40 4.53 4.66 4.80 4.97 5.14 5.30 5.43 5.61 5.80 6.00 6.19 6.40 6.60 6.82 2.05 2.15 2.26 2.38 2.50 2.60 2.75 2.90 3.05 3.20 3.35 3.50 3.65 3.80 3.97 4.10 4.23 4.35 4.50 4.63 4.76 4.90 5.07 5.24 5.40 5.63 5.81 6.00 6.20 6.39 6.60 6.80 7.02 7.20 5 5 5 5 5 5 5 5 5 5 5 5 5 5 100 100 100 110 120 130 130 130 130 120 70 40 30 25 IZ (mA) ZZK(Ω) Max IZ (mA) IR (mA) Max 5 1000 0.5 120 5 10.