015AZ2.0~015AZ12 TOSHIBA Diode Silicon Epitaxial Planar Type 015AZ2.0~015AZ12 Constant Voltage Regulation Applications Unit: mm l Small package l Nominal voltage tolerance about ±2.5% (2.0V~12V) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Power dissipation P* 150 Junction temperature Tj 125 Storage temperature range Tstg -55~125 *.
Z
X
015AZ5.6
Y
Z
X
015AZ6.2
Y
Z
X
015AZ6.8
Y
Z
* : Test time: t = 30ms
*
* : Product by order.
1.85 1.95 2.05 2.16 2.28 2.40 2.50 2.65 2.80 2.95 3.10 3.25 3.40 3.55 3.70 3.87 4.00 4.13 4.25 4.40 4.53 4.66 4.80 4.97 5.14 5.30 5.43 5.61 5.80 6.00 6.19 6.40 6.60 6.82
2.05 2.15 2.26 2.38 2.50 2.60 2.75 2.90 3.05 3.20 3.35 3.50 3.65 3.80 3.97 4.10 4.23 4.35 4.50 4.63 4.76 4.90 5.07 5.24 5.40 5.63 5.81 6.00 6.20 6.39 6.60 6.80 7.02 7.20
5 5 5 5 5 5 5 5 5
5
5
5
5
5
100 100 100 110 120 130 130 130 130
120
70
40
30
25
IZ (mA)
ZZK(Ω) Max
IZ (mA)
IR (mA) Max
5
1000
0.5
120
5
10.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 015AZ3.0 |
Toshiba Semiconductor |
Silicon Diode | |
2 | 015AZ3.3 |
Toshiba Semiconductor |
Silicon Diode | |
3 | 015AZ3.9 |
Toshiba Semiconductor |
Silicon Diode | |
4 | 015AZ10 |
Toshiba Semiconductor |
Silicon Diode | |
5 | 015AZ11 |
Toshiba Semiconductor |
Silicon Diode | |
6 | 015AZ12 |
Toshiba Semiconductor |
Silicon Diode | |
7 | 015AZ2.0 |
Toshiba Semiconductor |
Silicon Diode | |
8 | 015AZ2.2 |
Toshiba Semiconductor |
Silicon Diode | |
9 | 015AZ2.4 |
Toshiba Semiconductor |
Silicon Diode | |
10 | 015AZ2.7 |
Toshiba Semiconductor |
Silicon Diode | |
11 | 015AZ4.3 |
Toshiba Semiconductor |
Silicon Diode | |
12 | 015AZ4.7 |
Toshiba Semiconductor |
Silicon Diode |