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H7N1005DS |
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| Part Number | H7N1005DS |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | H7N1005DL, H7N1005DS Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 85 mΩ typ. • Low drive current • Capable of 4.5 V gate drive Outline REJ03G1736-0100 ... |
| Features |
• Low on-resistance RDS (on) = 85 mΩ typ. • Low drive current • Capable of 4.5 V gate drive Outline REJ03G1736-0100 Rev.1.00 Sep 19, 2008 RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) ) 4 123 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) D 4 123 G S 1. Gate 2. Drain 3. Source 4. Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty ... |
| Document |
 H7N1005DS Data Sheet
PDF 113.02KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | H7N1005DL |
Renesas |
Silicon N-Channel MOS FET |
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| 2 | H7N1005LD |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
|
| 3 | H7N1005LM |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
|
| 4 | H7N1005LS |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
|
| 5 | H7N1002AB |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
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