2SD1898 |
Part Number | 2SD1898 |
Manufacturer | SeCoS |
Description | Elektronische Bauelemente 2SD1898 1A , 100V NPN Epitaxial Planar Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE High Breakdown Voltage and Current Excellen... |
Features |
Junction & Storage temperature
TJ, TSTG
Ratings 100 80 5 1 0.5 250
150, -55~150
Unit V V V A W
°C/ W °C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max.
Collector-base breakdown voltage
V(BR)CBO
100
-
-
Collector-emitter breakdown voltage V(BR)CEO
80
-
-
Emitter-base breakdown voltage
V(BR)EBO
5
-
-
Collector cut-off current
ICBO - - 1
Emitter cut-off current DC current gain
IEBO - - 1 hFE 82 - 390
Collector-emitter saturation voltage
VCE(sat)
-
- 0.4
Transition frequency
fT - 100 -
Output Capacitance
COB - 20 -
U... |
Document |
2SD1898 Data Sheet
PDF 447.18KB |
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