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LSI1012LT1G |
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| Part Number | LSI1012LT1G |
| Manufacturer | LRC |
| Description | LESHAN RADIO COMPANY, LTD. N-Channel 1.8-V (G-S) MOSFET FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resistance: 0.7 W D Low Thre... |
| Features |
D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resistance: 0.7 W D Low Threshold: 0.8 V (typ) D Fast Switching Speed: 10 ns D S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. BENEFITS D Ease in Driving Switches D Low Offset (Error) Voltage D Low-Voltage Operation D High-Speed Circuits D Low Battery Voltage Operation
LSI1012LT1G S-LSI1012LT1G
3
1 2
SOT-23
Gate 1
3 Drain
APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memor... |
| Document |
 LSI1012LT1G Data Sheet
PDF 440.11KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | LSI1012N3T5G |
LRC |
N-Channel 1.8-V (G-S) MOSFET |
|
| 2 | LSI1012XT1G |
LRC |
N-Channel 1.8-V (G-S) MOSFET |
|
| 3 | LSI1013LT1G |
LRC |
P-Channel 1.8-V (G-S) MOSFET |
|
| 4 | LSI1013XT1G |
LRC |
P-Channel 1.8-V (G-S) MOSFET |
|
| 5 | LSI1032E |
Lattice Semiconductor |
ISPLSI1032E |
|