HFS8N65U |
Part Number | HFS8N65U |
Manufacturer | SemiHow |
Description | HFS8N65U HFS8N65U 650V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching... |
Features |
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested
March 2013
BVDSS = 650 V RDS(on) typ ȍ ID = 7.5 A
TO-220F
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuou... |
Document |
HFS8N65U Data Sheet
PDF 308.18KB |
Distributor | Stock | Price | Buy |
---|