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V40170PW-M3 |
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| Part Number | V40170PW-M3 |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | www.vishay.com V40170PW-M3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A TMBS® FEATURES • Trench MOS Schottky technology • ... |
| Features |
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TO-3PW PIN 1 PIN 3 PIN 2 CASE TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. Package 2 x 20 A 170 V 200 A 0.67 V 175 °C TO-3PW Diode variation Dual common cathode MECH... |
| Document |
 V40170PW-M3 Data Sheet
PDF 83.69KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | V40170PW |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 2 | V40170C-M3 |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 3 | V40100C |
Vishay Siliconix |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 4 | V40100C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier |
|
| 5 | V40100G |
Vishay Siliconix |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|