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AP2530GY-HF |
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| Part Number | AP2530GY-HF |
| Manufacturer | Advanced Power Electronics |
| Description | AP2530 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extr... |
| Features |
ating Factor
30 +20 3.3 2.6 10
1.14 0.01
-30 +20 -2.3 -1.8 -10
V V A A A W W/℃
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
-55 to 150 -55 to 150
℃ ℃
Thermal Data
Symbol Rthj-a
Parameter Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value 110
Unit ℃/W
1 201501215
AP2530GY-HF
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th) gfs IDSS
IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
D... |
| Document |
 AP2530GY-HF Data Sheet
PDF 83.10KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AP2530GY |
Advanced Power Electronics |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 2 | AP2530AGY-HF |
Advanced Power Electronics |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 3 | AP2531GY |
Advanced Power Electronics |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 4 | AP2531GY-HF |
Advanced Power Electronics |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 5 | AP2532GY |
Advanced Power Electronics |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|