AP2531GY-HF - Advanced Power Electronics

AP2531GY-HF N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP2531 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SOT-26 package is widely used for all commercialindustrial applications. N-CH P-CH G1 .

Features

wer Dissipation Storage Temperature Range Operating Junction Temperature Range 16 -16 +8 +8 3.5 -2.5 2.8 -2 10 -10 1.14 -55 to 150 -55 to 150 V V A A A W ℃ ℃ Thermal Data Symbol Parameter Rthj-a Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 110 Unit ℃/W 1 201408295 AP2531GY-HF N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage St.