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S-LBC817-40LT1G |
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| Part Number | S-LBC817-40LT1G |
| Manufacturer | LRC |
| Description | LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requi... |
| Features |
/W
°C
1 BASE
3 COLLECTOR
2 EMITTER
DEVICE MARKING
LBC817 –16LT1G = 6A; LBC817 –25LT1G = 6B; LBC817 –40LT1G = 6C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min OFF CHARACTERISTICS Collector –Emitter Breakdown Voltage (IC = 10 mA) Collector –Emitter Breakdown Voltage (VEB = 0, IC = 10 µA) Emitter –Base Breakdown Voltage (I E = 1.0 µA) Collector Cutoff Current (VCB = 20 V) (VCB = 20 V, TA = 150°C) 1. FR –5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR)CEO V (BR)CES V (BR)EBO I CBO 45 50 5.0 — — Typ Max Unit — —V — —... |
| Document |
 S-LBC817-40LT1G Data Sheet
PDF 280.21KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | S-LBC817-16LT1G |
LRC |
General Purpose Transistors |
|
| 2 | S-LBC817-25LT1G |
LRC |
General Purpose Transistors |
|
| 3 | S-LBAS16LT1G |
LRC |
Switching Diode |
|
| 4 | S-LBAS16WT1G |
Leshan Radio Company |
Switching Diode |
|
| 5 | S-LBAS20HT1G |
LRC |
High Voltage Switching Diode |
|