MS13N30 |
Part Number | MS13N30 |
Manufacturer | Bruckewell |
Description | These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Ty... |
Features |
• Low rDS(on) trench technology • Fast switching speed • Low thermal impedance • RoHS compliant package Applications: • Power Routing • Li Ion Battery Packs • Level Shifting and Driver Circuits Packing & Order Information 3,000/Reel Graphic symbol Publication Order Number: [MS13N30] © Bruckewell Technology Corporation Rev. A -2014 MS13N30 N-Channel 30-V (D-S) MOSFET MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (TA=25°C unless otherwise specified) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Currenta (TA=25°C) Contin... |
Document |
MS13N30 Data Sheet
PDF 440.89KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | MS13N50 |
Bruckewell |
N-Channel MOSFET | |
2 | MS1329 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS | |
3 | MS1336 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS | |
4 | MS1337 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS | |
5 | MS13P21 |
Bruckewell |
P-Channel MOSFET |