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These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features • Low rDS(o.
• Low rDS(on) provides higher efficiency and extends battery life
• Low thermal impedance copper leadframe SC70-3 saves board space
• Fast switching speed
• High performance trench technology
• RoHS compliant package Packing & Order Information 3,000/Reel
Graphic symbol
Publication Order Number: [MS13P21]
© Bruckewell Technology Corporation Rev. A -2014
MS13P21
P-Channel 20-V (D-S) MOSFET
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Cu.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MS1329 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS |
|
| 2 | MS1336 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS |
|
| 3 | MS1337 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS |
|
| 4 | MS13N30 |
Bruckewell |
N-Channel MOSFET |
|
| 5 | MS13N50 |
Bruckewell |
N-Channel MOSFET |
|
| 6 | MS1 |
BEL |
SLOW BLOW MICRO FUSE |
|
| 7 | MS1.5 |
Bel Fuse |
Slow Blow Micro Fuse |
|
| 8 | MS1000 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS |
|
| 9 | MS1001 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS |
|
| 10 | MS1003 |
Microsemi Corporation |
10 AMP SCHOTTKY BARRIER RECTIFIERS |
|
| 11 | MS1003 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS |
|
| 12 | MS1003SH |
Shindengen |
Quasi-Resonant Power Supply ICs |
|