STGWA30M65DF2 STMicroelectronics Trench gate field-stop IGBT Datasheet, en stock, prix

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STGWA30M65DF2

STMicroelectronics
STGWA30M65DF2
STGWA30M65DF2 STGWA30M65DF2
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Part Number STGWA30M65DF2
Manufacturer STMicroelectronics (https://www.st.com/)
Description plur These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the M series of IGBTs, which represent an optimum compromise in perform...
Features
 6 µs of minimum short-circuit withstand time
 VCE(sat) = 1.55 V (typ.) @ IC = 50 A
 Tight parameters distribution
 Safer paralleling
 Low thermal resistance
 Soft and very fast recovery antiparallel diode Applications
 Motor control
 UPS
 PFC Description plur These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential. Furthermore, a positive ...

Document Datasheet STGWA30M65DF2 Data Sheet
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