HY27SS16121A |
Part Number | HY27SS16121A |
Manufacturer | Hynix Semiconductor |
Description | & page.7 - The cache feature is deleted in summary description. - Note.3 is deleted. (page.7) 4) Add System interface using CE don’t care (page. 38) 5) Change TSOP1, WSOP1,FBGA package dimension & fig... |
Features |
SUMMARY
HIGH DENSITY NAND Flash MEMORIES - Cost effective solutions for mass storage applications
NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities
SUPPLY VOLTAGE - 3.3V device: VCC = 2.7 to 3.6V : HY27USXX121A - 1.8V device: VCC = 1.7 to 1.95V : HY27SSXX121A
Memory Cell Array = (512+16) Bytes x 32 Pages x 4,096 Blocks = (256+8) Words x 32 pages x 4,096 Blocks
FAST BLOCK ERASE - Block erase time: 2ms (Typ.)
STATUS REGISTER
ELECTRONIC SIGNATURE - Manufacturer Code - Device Code CHIP ENABLE DON'T CARE OPTION - Simple interface with microc... |
Document |
HY27SS16121A Data Sheet
PDF 406.43KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HY27SS16121M |
Hynix Semiconductor |
(HY27xSxx121M) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash | |
2 | HY27SS16561A |
Hynix Semiconductor |
(HY27xxxx561A) 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash | |
3 | HY27SS16561M |
Hynix Semiconductor |
(HY27xSxx561M) 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash | |
4 | HY27SS08121A |
Hynix Semiconductor |
512Mbit (64M x 8bit / 32M x 16bit) NAND Flash Memory | |
5 | HY27SS08121M |
Hynix Semiconductor |
(HY27xSxx121M) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |